features power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 6 v i c collector current -continuous 3 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics(tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 10ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 6 v collector cut-off current i cbo v cb = 40v, i e =0 1 a collector cut-off current i ceo v ce = 30v, i b =0 10 a emitter cut-off current i ebo v eb = 6v, i c =0 1 a h fe(1) v ce =2v, i c = 1a 60 400 dc current gain h fe(2) v ce =2v, i c = 100ma 32 collector-emitter saturation voltage v ce(sat) i c = 2a, i b = 0.2 a 0.5 v base-emitter saturation voltage v be(sat) i c = 2a, i b = 0.2 a 1.5 v transition frequency f t v ce = 5v , ic=0.1a f =10mhz 50 mhz classification of h fe(1) rank r o y gr range 60-120 100-200 160-320 200-400 sot-89 1. base 2. collector 3. emitter 1 2 3 D882 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics D882 2 date:2011/05 www.htsemi.com semiconductor jinyu
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